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RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features * Small surface mounting type * High reliability
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
Applications * Low current rectification
1
S7
Top View Marking Code: "S7" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFSM Tj Ts
Value 45 40 0.1 1 125 - 40 to + 125
Unit V V A A
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 100 mA at IF = 10 mA Reverse Current at VR = 10 V Capacitance Between Terminals at VR = 10 V, f = 1 MHz Symbol VF VF IR CT Typ. 6 Max. 0.55 0.34 30 Unit V V A pF
Note: ESD sensitive product handling required.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 01/09/2006
RB501V-40
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 01/09/2006
RB501V-40
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 01/09/2006

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